
Transistor/MOSFET
2N7002 MOSFET
The 2N7002 is a small signal N-Channel MOSFET designed for low-power switching applications. It features a 60V drain-source breakdown voltage and 300mA continuous drain current in a compact SOT-23 package.
₹15.00
Inclusive of all taxes
- Secure payments via Razorpay
- 7-day returns on defective items
- GST invoice on every order
Out of stock
Free delivery on orders above ₹2,000
Delivers in 4-7 business days
Check delivery at your pincode
₹15.00
Out of Stock
Category
Transistor/MOSFET
Quality
100% Genuine
About 2N7002 MOSFET
The 2N7002 is a high-performance N-Channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This small signal MOSFET is engineered for efficient switching and amplification in low-power electronic circuits. Key features include a low gate threshold voltage, fast switching speed, and low input capacitance, making it ideal for logic-level interfacing and general-purpose switching applications. With a maximum drain-source voltage of 60V and a continuous drain current of 300mA, it is suitable for driving relays, LEDs, and small motors in portable devices and IoT applications. The device is housed in a SOT-23 package, offering excellent thermal performance and space-saving benefits for compact PCB designs. Choose the 2N7002 for reliable performance in your next electronic project, whether for hobbyist prototyping or commercial product development.
Technical Specifications
| Transistor Polarity | N-Channel |
|---|---|
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 300 mA |
| Package Type | SOT-23 |
| Gate Threshold Voltage | 1 V (typical) |
| On-Resistance | Low |
| Operating Temperature | -55°C to 150°C |
| Mounting Type | Surface Mount (SMD) |
Alternative Components
2N7000
2N7002E
BS170
VN10LP









