IRLML6402 P-Channel MOSFET
The IRLML6402 is a high-performance P-Channel MOSFET from Infineon, designed for low-voltage switching applications. It features extremely low on-resistance (65 mOhm) in a compact SOT-23 package, ideal for power management in compact circuits.
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₹75.00
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About IRLML6402 P-Channel MOSFET
Technical Specifications
| Drain-Source Breakdown Voltage (Vds) | -20V |
|---|---|
| Continuous Drain Current (Id) | 3.7A |
| Drain-Source On-Resistance (Rds On) | 65 mOhms (max) |
| Gate-Source Threshold Voltage (Vgs) | -1V to -2V |
| Package | SOT-23 (Micro3) |
| Polarity | P-Channel |
| Power Dissipation | 1.3W |
| Operating Temperature Range | -55°C to +150°C |
| Technology | IR MOSFET™ |
| Pin Configuration | 3-pin (Gate, Drain, Source) |
Component Datasheet
Download the official datasheet for IRLML6402 P-Channel MOSFET
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