
Transistor/MOSFET
SI2301 P-Channel MOSFET
The SI2301 is a P-Channel Logic Level MOSFET in a compact SOT-23 package, designed for low-voltage switching applications. It features low on-resistance and high power dissipation capability, making it ideal for efficient power management in portable electronics.
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About SI2301 P-Channel MOSFET
The SI2301 A1SHB is a high-performance P-Channel Power MOSFET designed for switching applications requiring low voltage and moderate current. Utilizing a high-density cell design, it achieves extremely low RDS(ON) of 120 mOhms, minimizing conduction losses and improving efficiency. This MOSFET is capable of handling a continuous drain current of -2.8A and a drain-source voltage of -20V, making it suitable for load switching, power management in battery-operated devices, and DC-DC converter circuits. Its SOT-23 package is compact and ideal for space-constrained designs. Key features include a gate-source voltage range of ±8V, a maximum power dissipation of 1.25W, and an operating temperature range from -55°C to +150°C. The component is halogen-free and moisture sensitivity level 1, ensuring reliability and environmental compliance. Choose the SI2301 for your next project for a cost-effective, efficient, and reliable switching solution.
Technical Specifications
| Part Number | SI2301 (A1SHB) |
|---|---|
| Type | P-Channel MOSFET |
| Package | SOT-23 (3-pin) |
| Drain-Source Voltage (VDS) | -20V |
| Gate-Source Voltage (VGS) | ±8V |
| Continuous Drain Current (ID) | -2.8A |
| On-Resistance (RDS(ON)) | 120 mOhms |
| Power Dissipation (Pd) | 1.25W |
| Operating Temperature | -55°C to +150°C |
| Marking Code | A1SHB |
| Halogen Free | Yes |
| Moisture Sensitivity Level | 1 |
Component Datasheet
Download the official datasheet for SI2301 P-Channel MOSFET
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