TIP35 BJT
The TIP35C is a high-power NPN bipolar junction transistor (BJT) in a TO-247 package, designed for amplification and switching applications up to 100V and 25A.
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₹525.00
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Category
Component
Quality
100% Genuine
About TIP35 BJT
Technical Specifications
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
|---|---|
| Package | TO-247 |
| Collector-Emitter Voltage (Vceo) | 100V |
| Emitter-Base Voltage (Vebo) | 5V |
| Collector Current (Ic) | 25A (Continuous) |
| Power Dissipation (Pd) | 125W |
| Gain Bandwidth Product (fT) | 3 MHz |
| DC Current Gain (hFE) | 50 (typical) |
| Collector-Emitter Saturation Voltage | 1.8V |
| Operating Temperature | -55°C to 150°C |
| Pins | 3 (Collector, Base, Emitter) |
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