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MJE3055 BJT

The MJE3055 is a high-power NPN bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose amplification and power switching applications up to 60V and 10A.

MJE3055 BJT
₹20.64Buy Now

Specifications

Transistor Type: NPN Package Type: TO-220 Collector-Emitter Voltage (Vceo): 60V Collector-Base Voltage (Vcbo): 60V Emitter-Base Voltage (Vebo): 5V Continuous Collector Current (Ic): 10A Power Dissipation (Pd): 75W Gain Bandwidth Product (fT): 2 MHz Collector-Emitter Saturation Voltage: 1.1V Operating Temperature Range: -55°C to 150°C Pin Configuration: 1-Base, 2-Collector, 3-Emitter

Details

The MJE3055T is a silicon Epitaxial-Base NPN transistor housed in a standard JEDEC TO-220 package. This component is specifically designed for power switching circuits and general-purpose amplifiers, making it a versatile choice for various electronic projects. It features a collector-emitter voltage of 60V and a continuous collector current of 10A, allowing it to handle significant power loads. With a power dissipation rating of 75W, this transistor is ideal for applications such as motor drivers, power supplies, audio amplifiers, and relay controllers. The MJE3055T offers excellent gain characteristics and thermal stability, ensuring reliable performance in demanding environments. Its compact form factor and through-hole mounting make it easy to integrate into existing circuit designs. Whether you are building a DIY audio amplifier or designing a robust power management system, the MJE3055T provides the performance and reliability needed for professional and hobbyist applications alike.

Tags

NPN TransistorBJTPower TransistorTO-22060V 10AAmplifierSwitchingMotor Driver

Alternatives

  • MJE2955T
  • TIP3055
  • 2N3055
  • BD139