The MJE3055 is a high-power NPN bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose amplification and power switching applications up to 60V and 10A.

Transistor Type: NPN Package Type: TO-220 Collector-Emitter Voltage (Vceo): 60V Collector-Base Voltage (Vcbo): 60V Emitter-Base Voltage (Vebo): 5V Continuous Collector Current (Ic): 10A Power Dissipation (Pd): 75W Gain Bandwidth Product (fT): 2 MHz Collector-Emitter Saturation Voltage: 1.1V Operating Temperature Range: -55°C to 150°C Pin Configuration: 1-Base, 2-Collector, 3-Emitter

