IRLML6402 P-Channel MOSFET

The IRLML6402 is a single P-channel HEXFET power MOSFET from Infineon Technologies, engineered for efficient power switching in low-voltage applications. Utilizing advanced processing techniques, it achieves extremely low on-resistance per silicon area, minimizing power loss and heat generation. This MOSFET operates with a drain-source breakdown voltage of -20V and supports a continuous drain current of up to 3.7A, making it suitable for battery-powered devices, load switching, and power management circuits. Key features include a gate threshold voltage of -1V to -2V, fast switching speeds, and a compact SOT-23 (Micro3) package for space-constrained designs. Common applications include high-side switching in GPS modules, DC-DC converters, motor control, and portable electronics. Buyers should choose this component for its reliability, low Rds(on), and proven performance in industrial and consumer electronics, ensuring efficient and durable circuit operation.