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AO3407 P-Channel MOSFET

The AO3407 is a high-performance P-Channel MOSFET in a compact SOT-23 package, designed for low-voltage applications requiring efficient switching with low RDS(ON). Ideal for load switching and PWM control.

AO3407 P-Channel MOSFET
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Specifications

MOSFET Type: P-Channel Enhancement Mode Drain-Source Voltage (VDS): -30V Gate-Source Voltage (VGS): ±20V Continuous Drain Current (ID): -4.1A (at VGS = -10V) RDS(ON) (at VGS = -10V): < 52mΩ RDS(ON) (at VGS = -4.5V): < 75mΩ (approximate based on datasheet) Gate Charge (Qg): 9.2nC (at VGS = -10V) Package: SOT-23 Pin Configuration: 3-Pin (Gate, Drain, Source) Operating Temperature Range: -55°C to +150°C Technology: Advanced TrenchFET Mounting Type: Surface Mount (SMD)

Details

The AO3407 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. With a drain-source voltage rating of -30V and continuous drain current of -4.1A, it is optimized for low-voltage, high-efficiency switching applications. Its low gate threshold voltage allows direct drive from logic-level sources, making it suitable for microcontroller-based projects. The device features fast switching speeds and robust performance, making it ideal for power management in portable devices, battery protection circuits, DC-DC converters, and load switching applications. The compact SOT-23 package saves board space while maintaining thermal efficiency. This MOSFET is an excellent choice for engineers and hobbyists looking for reliable, cost-effective switching solutions in Indian electronics projects.

Tags

MOSFETP-ChannelSOT-23Load SwitchPWM30V4.1ATransistor

Alternatives

  • IRF9540N
  • AO3401A
  • SI2301DS
  • DMG2302UX
📄 View Datasheet