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MJE2955 BJT

The MJE2955T is a high-power PNP bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose amplification and switching applications up to 60V and 10A.

MJE2955 BJT
₹172.04Buy Now

Specifications

Transistor Type: PNP Maximum Collector-Emitter Voltage (VCEO): 60V Maximum Collector-Base Voltage (VCBO): 60V Maximum Emitter-Base Voltage (VEBO): 5V Continuous Collector Current (IC): 10A Power Dissipation (Pd): 75W (TO-220 package) Gain Bandwidth Product (fT): 2MHz Package Type: TO-220 Operating Temperature Range: -55°C to 150°C Pin Configuration: 1-Base, 2-Collector, 3-Emitter (Standard TO-220)

Details

The MJE2955T is a silicon Epitaxial-Base PNP transistor manufactured by STMicroelectronics, housed in a standard TO-220 package. This component is designed for high-power linear and switching applications, capable of handling collector currents up to 10A and collector-emitter voltages up to 60V. With a power dissipation rating of 75W to 125W, it is ideal for use in audio amplifiers, power supply regulation, and motor control circuits. Key features include a gain bandwidth product of 2MHz and robust thermal performance. Buyers should choose this transistor for its reliability, wide availability, and compatibility with common NPN counterparts like the MJE3055T for complementary push-pull configurations. Ensure proper heat sinking for optimal performance in demanding applications.

Tags

PNP TransistorBJTTO-220Power Transistor60V 10AAudio AmplifierSwitchingHigh Power

Alternatives

  • MJE3055T
  • TIP32C
  • 2N3055
  • MJ2955