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BD139 Power BJT

The BD139 is a medium power NPN bipolar junction transistor (BJT) designed for audio amplification and general-purpose switching applications. It features a TO-126 package and is widely used in driver stages of amplifiers.

BD139 Power BJT
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Specifications

Transistor Type: NPN Bipolar Junction Transistor (BJT) Maximum Collector-Emitter Voltage (Vceo): 80V Maximum Collector-Base Voltage (Vcbo): 80V Maximum Emitter-Base Voltage (Vebo): 5V Continuous Collector Current (Ic): 1.5A DC Current Gain (hFE): 40 to 250 Power Dissipation (Pd): 12.5W Package Type: TO-126 (3-Pin) Mounting Type: Through Hole Operating Temperature Range: -55°C to +150°C Frequency (fT): Typically 50 MHz

Details

The BD139 is a versatile NPN bipolar junction transistor (BJT) from STMicroelectronics, specifically designed for audio amplifiers and driver circuits. It is part of the complementary pair BD135/BD139 (NPN) and BD136/BD140 (PNP), making it ideal for use in quasi-complementary and complementary audio output stages. This transistor is capable of handling a continuous collector current of up to 1.5A and supports a collector-emitter voltage of 80V. Its key features include high DC current gain (hFE) ranging from 40 to 250, ensuring efficient signal amplification. The TO-126 package offers good thermal performance and is suitable for through-hole mounting on PCBs. Common applications include low-frequency power amplifiers, voltage regulators, and switching circuits in consumer electronics and hobbyist projects. Choosing the BD139 ensures reliability, proven performance in audio applications, and easy availability in the Indian market, making it a go-to component for both professionals and electronics enthusiasts.

Tags

BD139NPN TransistorBJTAudio AmplifierTO-126Power TransistorSwitchingSTMicroelectronics

Alternatives

  • BD140
  • BD135
  • BD136
  • TIP31C