The TIP35C is a high-power NPN bipolar junction transistor (BJT) in a TO-247 package, designed for amplification and switching applications up to 100V and 25A.

Transistor Type: NPN Bipolar Junction Transistor (BJT) Package: TO-247 Collector-Emitter Voltage (Vceo): 100V Emitter-Base Voltage (Vebo): 5V Collector Current (Ic): 25A (Continuous) Power Dissipation (Pd): 125W Gain Bandwidth Product (fT): 3 MHz DC Current Gain (hFE): 50 (typical) Collector-Emitter Saturation Voltage: 1.8V Operating Temperature: -55°C to 150°C Pins: 3 (Collector, Base, Emitter)

