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2N3055 BJT

The 2N3055 is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is housed in a robust TO-3 metal package, making it ideal for audio amplifiers, power supplies, and motor control circuits.

2N3055 BJT
₹104.50Buy Now

Specifications

Transistor Type: NPN Maximum DC Collector Current (Ic): 15 A Collector-Emitter Voltage (VCEO): 60 V Collector-Base Voltage (VCBO): 100 V Emitter-Base Voltage (VEBO): 7 V Power Dissipation (Pd): 115 W Package / Case: TO-3 Configuration: Single Operating Temperature: -65°C to +200°C DC Current Gain (hFE): 20 to 70 (typical)

Details

The 2N3055 is a classic silicon NPN power transistor, widely recognized for its durability and performance in high-power applications. Encased in a hermetically sealed TO-3 metal package, it is designed for reliable operation in demanding environments. This transistor features a high collector current rating of 15A and a collector-emitter voltage of 60V, allowing it to handle substantial power loads up to 115W. It is commonly used in audio amplification circuits (especially in the output stages of power amplifiers), series and shunt voltage regulators, switching circuits, and motor control drivers. Its robust construction and proven reliability make it a staple in both hobbyist projects and industrial electronics. Choosing the 2N3055 ensures you get a component with a long history of dependable performance, excellent thermal characteristics, and wide availability, making it an excellent choice for your power electronics needs.

Tags

2N3055NPN TransistorPower TransistorTO-3BJTAudio AmplifierSwitchingHigh Power

Alternatives

  • TIP3055
  • 2N3773
  • MJ15003
  • BD249