The 2N3055 is a high-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is housed in a robust TO-3 metal package, making it ideal for audio amplifiers, power supplies, and motor control circuits.

Transistor Type: NPN Maximum DC Collector Current (Ic): 15 A Collector-Emitter Voltage (VCEO): 60 V Collector-Base Voltage (VCBO): 100 V Emitter-Base Voltage (VEBO): 7 V Power Dissipation (Pd): 115 W Package / Case: TO-3 Configuration: Single Operating Temperature: -65°C to +200°C DC Current Gain (hFE): 20 to 70 (typical)

