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2N7002 MOSFET

The 2N7002 is a small signal N-Channel MOSFET designed for low-power switching applications. It features a 60V drain-source breakdown voltage and 300mA continuous drain current in a compact SOT-23 package.

2N7002 MOSFET
₹12.47Buy Now

Specifications

Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 300 mA Package Type: SOT-23 Gate Threshold Voltage: 1 V (typical) On-Resistance: Low Operating Temperature: -55°C to 150°C Mounting Type: Surface Mount (SMD)

Details

The 2N7002 is a high-performance N-Channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This small signal MOSFET is engineered for efficient switching and amplification in low-power electronic circuits. Key features include a low gate threshold voltage, fast switching speed, and low input capacitance, making it ideal for logic-level interfacing and general-purpose switching applications. With a maximum drain-source voltage of 60V and a continuous drain current of 300mA, it is suitable for driving relays, LEDs, and small motors in portable devices and IoT applications. The device is housed in a SOT-23 package, offering excellent thermal performance and space-saving benefits for compact PCB designs. Choose the 2N7002 for reliable performance in your next electronic project, whether for hobbyist prototyping or commercial product development.

Tags

MOSFETN-ChannelSOT-23Small SignalSwitching60V300mATransistor

Alternatives

  • 2N7000
  • 2N7002E
  • BS170
  • VN10LP