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FDP8870 MOSFET

The FDP8870 is a high-performance N-Channel PowerTrench MOSFET designed for high-efficiency DC/DC conversion. It features low on-resistance (4.1mΩ) and is housed in a standard TO-220 package.

FDP8870 MOSFET
₹759.84Buy Now

Specifications

Transistor Polarity: N-Channel Drain-Source Breakdown Voltage (Vds): 30V Continuous Drain Current (Id): 156A (Tc=100°C) Gate-Source Voltage (Vgs): ±20V On-Resistance (Rds(on)) @ Vgs=10V: 4.1mΩ (max) Power Dissipation (Pd): 160W Package / Case: TO-220-3 (TO-220AB) Mounting Type: Through Hole Operating Temperature Range: -55°C to 175°C

Details

The FDP8870 from onsemi (formerly Fairchild) is a robust N-Channel PowerTrench MOSFET optimized for switching applications. It is specifically designed to improve the efficiency of DC/DC converters in both synchronous and conventional topologies. With a drain-source voltage rating of 30V and a continuous drain current of up to 156A (at Tc=100°C), this component is ideal for high-power switching power supplies, motor control, and power management in industrial and computing applications. Its key advantage lies in the ultra-low on-resistance (Rds(on)) of 4.1mΩ (max) at Vgs=10V, which significantly reduces conduction losses and heat generation. The TO-220-3 package ensures easy mounting and effective heat dissipation. Choose the FDP8870 for reliable performance and high efficiency in your power electronics designs.

Tags

MOSFETN-ChannelPowerTrenchTO-220DC-DC Converter30VHigh CurrentSwitching

Alternatives

  • IRF3205
  • IRLB8743
  • FQP30N06L
  • IRFZ44N