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IRLZ34N Logic-Level MOSFET

The IRLZ34N is a high-performance Logic-Level N-Channel Power MOSFET designed for low-voltage, high-current switching applications. It features a low on-resistance and is fully gate-drive compatible with 3.3V and 5V logic, making it ideal for microcontroller-based projects.

IRLZ34N Logic-Level MOSFET
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Specifications

Type: N-Channel Logic-Level MOSFET Package: TO-220AB Drain-Source Voltage (Vds): 55V Continuous Drain Current (Id): 30A (at Tc=25°C) Gate-Source Voltage (Vgs): ±10V On-Resistance (Rds(on)): 0.035Ω (Max) at Vgs=4.5V, Id=17A Power Dissipation (Pd): 68W Operating Junction Temperature: -55°C to 175°C Gate Threshold Voltage (Vth): 1.0V to 2.0V Input Capacitance (Ciss): 1450pF (Typical) Reverse Recovery Time (trr): 35ns

Details

The IRLZ34N is an advanced N-Channel Power MOSFET manufactured by Infineon Technologies (formerly International Rectifier). Utilizing advanced processing techniques, it achieves extremely low on-resistance per silicon area, making it highly efficient for power management. This logic-level device is specifically designed to be fully turned on by standard 3.3V or 5V logic signals, eliminating the need for gate driver ICs in many low-voltage applications. It is housed in the industry-standard TO-220 package, which is preferred for commercial and industrial applications up to 50W power dissipation. With a drain-source voltage rating of 55V and a continuous drain current of 30A, it is perfect for motor control, switching power supplies, and DC-DC converters. Its fast switching speed and ruggedness make it a reliable choice for hobbyists and engineers building battery-powered devices, robotics, and automation systems.

Tags

MOSFETN-ChannelLogic LevelTO-220Power Switching55V 30AMotor DriverInfineon

Alternatives

  • IRF540N
  • IRFZ44N
  • IRLB8743
  • FQP30N06L
📄 View Datasheet