
Transistor/MOSFET
FDP8870 MOSFET
The FDP8870 is a high-performance N-Channel PowerTrench MOSFET designed for high-efficiency DC/DC conversion. It features low on-resistance (4.1mΩ) and is housed in a standard TO-220 package.
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About FDP8870 MOSFET
The FDP8870 from onsemi (formerly Fairchild) is a robust N-Channel PowerTrench MOSFET optimized for switching applications. It is specifically designed to improve the efficiency of DC/DC converters in both synchronous and conventional topologies. With a drain-source voltage rating of 30V and a continuous drain current of up to 156A (at Tc=100°C), this component is ideal for high-power switching power supplies, motor control, and power management in industrial and computing applications. Its key advantage lies in the ultra-low on-resistance (Rds(on)) of 4.1mΩ (max) at Vgs=10V, which significantly reduces conduction losses and heat generation. The TO-220-3 package ensures easy mounting and effective heat dissipation. Choose the FDP8870 for reliable performance and high efficiency in your power electronics designs.
Technical Specifications
| Transistor Polarity | N-Channel |
|---|---|
| Drain-Source Breakdown Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 156A (Tc=100°C) |
| Gate-Source Voltage (Vgs) | ±20V |
| On-Resistance (Rds(on)) @ Vgs=10V | 4.1mΩ (max) |
| Power Dissipation (Pd) | 160W |
| Package / Case | TO-220-3 (TO-220AB) |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55°C to 175°C |
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