
Transistor/MOSFET
FQP27P06 P-Channel MOSFET
The FQP27P06 is a high-performance P-Channel MOSFET from onsemi (formerly Fairchild), designed for efficient power switching in various electronic applications. It features low on-resistance and high current handling capability in a standard TO-220 package.
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About FQP27P06 P-Channel MOSFET
The FQP27P06 is a P-Channel enhancement mode power MOSFET manufactured using onsemi's proprietary planar stripe and DMOS technology. This component is designed for high-efficiency power management, offering a low drain-source on-resistance (Rds(on)) of 70 mOhms, which minimizes power loss and improves overall system efficiency. With a maximum drain-source voltage of -60V and a continuous drain current of -27A, it is well-suited for medium-power switching and amplification tasks. Its robust TO-220 package ensures excellent thermal performance, making it ideal for heat dissipation in demanding environments. Common applications include power supply circuits, motor control, DC-DC converters, and load switching in industrial and consumer electronics. Choosing the FQP27P06 ensures reliability and performance, backed by onsemi's reputation for quality semiconductor solutions. It is a versatile component for engineers and hobbyists looking for a dependable P-Channel MOSFET for their designs.
Technical Specifications
| Polarity | P-Channel |
|---|---|
| Drain-Source Breakdown Voltage (Vds) | -60 V |
| Continuous Drain Current (Id) | -27 A |
| Drain-Source On-Resistance (Rds(on)) | 70 mOhms |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 to -4 V |
| Package/Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55°C to 150°C |
| Technology | QFET (Planar Stripe DMOS) |
| Number of Channels | 1 |
Component Datasheet
Download the official datasheet for FQP27P06 P-Channel MOSFET
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