
Transistor/MOSFET
IRF520 N-Channel MOSFET
The IRF520 is a robust N-Channel Power MOSFET designed for fast switching and low on-resistance. Ideal for switching applications in robotics, power supplies, and motor control circuits.
₹119.00
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About IRF520 N-Channel MOSFET
The IRF520 is a third-generation power MOSFET from Vishay (and other manufacturers like Infineon) designed to provide the best combination of fast switching, ruggedized device design, and low on-resistance. As an N-Channel enhancement mode silicon gate power field effect transistor, it features extremely low on-resistance per silicon area, making it highly efficient for power management. This component is widely used in various switching and amplification applications, including DC motor control, solenoid drivers, and power supply inverters. With a drain-to-source voltage rating of 100V and a continuous drain current of 9.2A, it is suitable for medium-power circuits. The TO-220 package ensures easy mounting and effective heat dissipation. Choose the IRF520 for reliable performance in your DIY electronics projects, industrial automation systems, and battery-operated devices where efficiency and durability are paramount.
Technical Specifications
| Drain to Source Voltage (VDS) | 100V |
|---|---|
| Continuous Drain Current (ID) | 9.2A @ 25°C |
| Gate Threshold Voltage | 2.0V – 4.0V |
| RDS(on) | 0.27Ω |
| Package Type | TO-220 |
| Channel Type | N-Channel |
| Operating Temperature | -55°C to 175°C |
| Power Dissipation | 60W |
| Mounting Type | Through Hole |
Component Datasheet
Download the official datasheet for IRF520 N-Channel MOSFET
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