
Transistor/MOSFET
IRF4905 P-Channel MOSFET
The IRF4905 is a high-performance P-Channel MOSFET designed for high-current, low-voltage applications. This 55V, 74A HEXFET Power MOSFET in a TO-220 package offers excellent switching performance and low on-resistance.
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About IRF4905 P-Channel MOSFET
The IRF4905 is a robust P-Channel Power MOSFET from Infineon Technologies, engineered to deliver exceptional performance in demanding power management applications. This HEXFET device features a 55V drain-source breakdown voltage and can handle continuous drain currents up to 74A, making it ideal for high-power switching applications. The MOSFET is housed in a standard TO-220 package, which allows for efficient heat dissipation and easy mounting on heatsinks. With its low on-resistance and fast switching characteristics, the IRF4905 excels in DC-DC converters, power management circuits, motor control systems, and battery management applications. The device is fully avalanche rated and operates reliably across a wide temperature range from -55°C to 175°C. Whether you're designing power supplies, motor drivers, or switching regulators, the IRF4905 offers the reliability and performance needed for professional electronics projects.
Technical Specifications
| Transistor Type | P-Channel MOSFET |
|---|---|
| Number of Channels | 1 |
| Drain-Source Voltage (Vds) | -55V |
| Continuous Drain Current (Id) | 74A |
| Pulsed Drain Current | 260A |
| Gate-Source Voltage (Vgs) | ±20V |
| Power Dissipation | 200W |
| On-Resistance (Rds(on)) | 0.02Ω |
| Gate Charge (Qg) | 180nC |
| Package | TO-220 |
| Operating Temperature | -55°C to 175°C |
| Mounting Type | Through Hole |
| Configuration | Single |
Component Datasheet
Download the official datasheet for IRF4905 P-Channel MOSFET
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