
Component
MJE2955 BJT
The MJE2955T is a high-power PNP bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose amplification and switching applications up to 60V and 10A.
₹203.00
Inclusive of all taxes
- Secure payments via Razorpay
- 7-day returns on defective items
- GST invoice on every order
Free delivery on orders above ₹2,000
Delivers in 4-7 business days
Check delivery at your pincode
Quantity:
1
₹203.00
Inclusive of all taxes
Category
Component
Quality
100% Genuine
About MJE2955 BJT
The MJE2955T is a silicon Epitaxial-Base PNP transistor manufactured by STMicroelectronics, housed in a standard TO-220 package. This component is designed for high-power linear and switching applications, capable of handling collector currents up to 10A and collector-emitter voltages up to 60V. With a power dissipation rating of 75W to 125W, it is ideal for use in audio amplifiers, power supply regulation, and motor control circuits. Key features include a gain bandwidth product of 2MHz and robust thermal performance. Buyers should choose this transistor for its reliability, wide availability, and compatibility with common NPN counterparts like the MJE3055T for complementary push-pull configurations. Ensure proper heat sinking for optimal performance in demanding applications.
Technical Specifications
| Transistor Type | PNP |
|---|---|
| Maximum Collector-Emitter Voltage (VCEO) | 60V |
| Maximum Collector-Base Voltage (VCBO) | 60V |
| Maximum Emitter-Base Voltage (VEBO) | 5V |
| Continuous Collector Current (IC) | 10A |
| Power Dissipation (Pd) | 75W (TO-220 package) |
| Gain Bandwidth Product (fT) | 2MHz |
| Package Type | TO-220 |
| Operating Temperature Range | -55°C to 150°C |
| Pin Configuration | 1-Base, 2-Collector, 3-Emitter (Standard TO-220) |
Alternative Components
MJE3055T
TIP32C
2N3055
MJ2955









