
Component
MJE3055 BJT
The MJE3055 is a high-power NPN bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose amplification and power switching applications up to 60V and 10A.
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₹24.00
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Category
Component
Quality
100% Genuine
About MJE3055 BJT
The MJE3055T is a silicon Epitaxial-Base NPN transistor housed in a standard JEDEC TO-220 package. This component is specifically designed for power switching circuits and general-purpose amplifiers, making it a versatile choice for various electronic projects. It features a collector-emitter voltage of 60V and a continuous collector current of 10A, allowing it to handle significant power loads. With a power dissipation rating of 75W, this transistor is ideal for applications such as motor drivers, power supplies, audio amplifiers, and relay controllers. The MJE3055T offers excellent gain characteristics and thermal stability, ensuring reliable performance in demanding environments. Its compact form factor and through-hole mounting make it easy to integrate into existing circuit designs. Whether you are building a DIY audio amplifier or designing a robust power management system, the MJE3055T provides the performance and reliability needed for professional and hobbyist applications alike.
Technical Specifications
| Transistor Type | NPN |
|---|---|
| Package Type | TO-220 |
| Collector-Emitter Voltage (Vceo) | 60V |
| Collector-Base Voltage (Vcbo) | 60V |
| Emitter-Base Voltage (Vebo) | 5V |
| Continuous Collector Current (Ic) | 10A |
| Power Dissipation (Pd) | 75W |
| Gain Bandwidth Product (fT) | 2 MHz |
| Collector-Emitter Saturation Voltage | 1.1V |
| Operating Temperature Range | -55°C to 150°C |
| Pin Configuration | 1-Base, 2-Collector, 3-Emitter |
Alternative Components
MJE2955T
TIP3055
2N3055
BD139









